905nm 50W Pulsed Laser Chip

Parameter

Symbolum

Min.

Typ.

Maximilianus.

Unitas

Operatio

Centrum Wavenength

I c

895

905

915

nm

apicem O*utput Power

Po

50

-

-

W

Operatio Mode

-

QCW

-

Pulsus latitudo

t

-

200

-

%

Frequentia

f

-

5

-

KHz

Officium cyclum

D

-

0.1

-

%

Electro Optica Data

Limen Current

I_TH

-

0.7

-

A

Operans Current

I_OP**

-

14

-

A

Operans Voltage

V_OP**

-

7.6

-

V

Clivus efficiency

η_D

-

3.7

-

W/A

Totalis conversionem efficientiam

η

-

47

-

%

Tardus a *xis d *ivergency (FWHM)

θ_‖

-

12

-

deg

Fast axis D *ivergency (FWHM)

θ_⊥

-

31

-

deg

Spectralis latitudo (FWHM)

»

-

5

-

nm

Necem temperatus coefficientis

λ_T

-

0.28

-

nm/℃

Polarization

-

-

TE

-

-

LD Operatingttemperatus

-

-

25

-

℃

Geometrica

Current iniectio crosssection

wxh *

-

150x10

-

µm²

Cavitaslength

L

-

750

-

µm

Chip Latitudo

W

-

400

-

µm

Chip altitudo

H

-

150

-

µm