Blue lux semiconductor laser structuram et opus principium

Fretus in activae regionis materia, in cohortem gap width of semiconductor materia de hyacintho lucis semiconductor laser variatur, ita semiconductor laser potest emit lux diversis coloribus. Et activae regionis materia de hyacintho lux semiconductor laser est gan aut ingan. The structure of a typical GaN-based laser is shown in Figure 1. From bottom to top in the z direction, it is the n-electrode, GaN substrate, n-type A1GaN lower confinement layer, n-type hGaN lower waveguide layer, multi-quantum well (MQW) active region, unintentionally doped hGaN upper waveguide layer, p-type electron blocking layer (EBL), p-type A1GGS superiori vinculum, P-genus gan iacuit, et P-Electrode

In materia refractive index de multi-quantum bene activae regionis (MQWS) est summum, et refractivam index ex utraque parte activae ostendit decrescendo. Distribution per refractivam index in z directionem altum medium humilitatem superius et inferius lux in z Directioni inter superius et inferioris Waveguide layers. In y parte, pars P-genus iacuit utrinque laser abducitur a Etching et tenui laser Silicon dioxide (SIO2) deposita, eventually formatam structuram. Refractivam index Silicon dioxide et aere minor quam P-genus iacuit, ita refractivae index in y directionem altum medium low utrinque et lucem in medium iugum. Ex ad limitandi effectus ex y et z directiones in lucem agri, in agro in YZ planum munera ellipticum distribution. In x directionem, in fronte et tergo cavum superficies potest formari mechanica CISCUS vel etching et reflectivity frontem et tergo cavum superficiei potest esse adaequatum a evaporating in Dielectric amet. Plerumque reflectivity fronte cavum superficiem minor tergo cavum superficiem ut laser emittitur a fronte cavum superficiem.