A laser Diode chip est semiconductor-fundatur laser quod est a P-n structura et sit amet. Et laser diode sarcina est completum fabrica, quod est convenerunt et packaged simul in signato sarcina habitationi ad formare a semiconductor laser chip, quod emat cohaeret in temperatus photodired chip ad feedback ad temperatus photodired chip ad photitoring, aut ad temperatus, aut in Lens in laser, aut optical lens laser collimationem.
Polarization characteres lux descriptio vibrationis directionem electrica agri vector lucis. Sunt quinque polarization civitatibus in totalis: omnino unpolaried lux, parte polarized lux linearly polarized lux, elliptically polarized lux, et circulariter polarized lux
A sentinam laser est laser solebat providere an excitationem lucem fontem ad fibra laser aut fibra amplior. Et emission fluctuum a 980nm sentinam laser est circa CMLXXX Nanometers (NM).
ASE Broadband lux generatur ab Erbium-Doped fibra est ampliari spontanea emissionem lucem generatae per brevis-intus laser elit Erbium-doped fibra. Sicut ostensum est in sequentibus diagram, et exantlaretur rara terra ions transitio inter superius et inferiores industria campester ad generare spontanea emissionem lucem, quod ampliatur in excitari emissionem processus. Processus iteratur continuum et satis excelsum output potestatem potest effectum satis elit conditionibus. (ASE = ampliata spontanea emissionem, ampliatum spontanea emissionem lucem)
For polarization-maintaining (PM) optical fiber, assuming that the polarization direction of the input linearly polarized light is in the middle of the fast axis and the slow axis, it can be decomposed into two orthogonal polarization components. Ut ostensum est in figura infra, duo lux fluctus initio idem tempus, sed quia refractivam index tardius axis maius quam jejunium axis, tempus differentia erit crescat linearly in propagatione distantiam differentia erit crescat linearly in propagatione distantiam.
Fretus in activae regionis materia, in cohortem gap width of semiconductor materia de hyacintho lucis semiconductor laser variatur, ita semiconductor laser potest emit lux diversis coloribus. Et activae regionis materia de hyacintho lux semiconductor laser est gan aut ingan.
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